S1. III-N Bulk Crystal Growth
S1. III-N Bulk Crystal Growth
Monday,
Nov. 10, 2025 15:00-15:30
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| Presider: |
Prof. Ming-Chi Mitch Chou (National Cheng Kung University, Taiwan)
Dr. Michał Boćkowski (Institute of High-Pressure Physics, Polish Academy of Sciences, Poland) |
| Room: |
2nd Lecture Room |
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15:00 - 15:15
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Award Candidate (Paper Competition)
Manuscript ID. 0081
Paper No. 2025-Mon-S0108-O001
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| Shogo Washida
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Surface Planarization and Reduction of Threading Dislocation Density of GaN Crystals after Facet Growth in the Na-flux Method
Shogo Washida, Masayuki Imanishi, Ryotaro Sasaki, Kosuke Murakami, Shigeyoshi Usami, Mihoko Maruyama, Yusuke Mori, Graduate. School of Engineering., the University of Osaka; Masashi Yoshimura, Graduate. School of Engineering., the University of Osaka, Institute of Laser Engineering, the University of Osaka
We proposed a new method using meltback in an unsaturated Ga–Na melt to promote growth by {10-11}-facets. However, surface unevennesses caused by facet growth led to the formation of pits after polishing, complicating accurate evaluation of the overall threading dislocation density (TDD). Microcrystals released from the seed crystal during meltback induced polycrystalline formation, hindering surface planarization. In this study, meltback and growth were separated to eliminate microcrystals and suppress polycrystalline formation, thereby enabling surface planarization. The average TDD above pits was 8.5 × 10⁴ cm⁻², while other regions showed 7.0 × 10⁴ cm⁻². These results indicate that facet growth contributes to overall TDD reduction.
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15:15 - 15:30
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Manuscript ID. 0018
Paper No. 2025-Mon-S0108-O002
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| Sen Li
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Fabrication of Needle-like AlN Seed Crystals and Epitaxial Growth using Fe-based Fluxes
Sen Li, Chiaki Amei, Masayoshi Adachi, Makoto Ohtsuka, Hiroyuki Fukuyama, Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Japan
In this study, the fabrication of AlN seed crystals and subsequent epitaxial growth were investigated using Fe-based fluxes. First, vapor-solid growth of AlN in Fe-Al flux was optimized to produce high-quality seed crystals, with XRC FWHMs of (0002) and (10-10) reflections reaching 18 and 32 arcsec, respectively. These crystals were further employed as seeds for solution growth in Fe-Cr fluxes. The diameter of the grown AlN increased from 114 μm to 515 μm at a growth rate of approximately 66 μm/h. This research proposes a novel method for synthesizing high-quality bulk AlN crystals exclusively using Fe-based alloys.
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