S3. III-N Ternary and Quaternary Alloys
Poster Session
Tuesday,
Nov. 11, 2025 15:00-17:00
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Multifunction Room |
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Manuscript ID. 0091
Paper No. 2025-Tue-P0301-P001
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| Tomasz Sochacki
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AlxGa1-xN growth by Halide Vapor Phase Epitaxy
Arianna Jaroszynska, Karol Pozyczka, Petro Sadovyi, Robert Kucharski, Pawel Kempisty, Michal Bockowski, Tomasz Sochacki, Institute of High Pressure Physics, Polish Academy of Sciences; Lutz Kirste, Fraunhofer Institute for Applied Solid State Physics (IAF)
The growth of Aluminum Gallium Nitride (AlxGa1-xN) layers by Halide Vapor Phase Epitaxy (HVPE) on ammonothermal GaN substrates was investigated. Metal chloride precursors were synthesized from high-purity Ga and Al using HCl or Cl₂ in a multi-zone HVPE reactor. The effects of hydrogen admixture and substrate misorientation on morphology, Al incorporation, and structural quality were analyzed. A 60 µm-thick AlxGa1-xN layer with ~10 at.% Al was obtained in a single run. Step-flow morphologies and a considerable Borrmann effect indicated high crystalline quality between cracks caused by seed–layer mismatch. Results demonstrate the potential for producing free-standing AlxGa1-xN substrates.
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