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Manuscript ID. 0035
Paper No. 2025-Tue-P0501-P001
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| Ho, Ai
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Comparison of n-Ga₂O₃/p-GaN PN Heterojunction Diode Grown by TMGa and TEGa
Ho, Ai, Chun-Kai Huang, Institute of Pioneer Semiconductor Innovation, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan; Sheng-Ti Chung, Ray-Hua Horng, Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan
This study compares β-Ga₂O₃ PN heterojunctions grown using TMGa and TEGa sources. Devices were fabricated with identical metal contacts and annealing parameters, and evaluated for their electrical characteristics. TMGa-grown devices showed higher on/off ratio and higher breakdown voltage, while TEGa-grown structures demonstrated superior ideality factors. The results highlight trade-offs between precursor choice and Ga₂O₃ device performance.
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Manuscript ID. 0036
Paper No. 2025-Tue-P0501-P002
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| Chang Hao-Wei
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Effect of Post-Deposition Annealing on Room-Temperature Sputtered NiO Gate Dielectric for AlGaN/GaN HEMTs
Hao-Wei Chang, 0965003491; Po-Chuan Liao, qwert61004.ee12@nycu.edu.tw; Ray-Hua Horng, rayhua@nycu.edu.tw
This study investigates the integration of nickel oxide (NiO), deposited 100 nm at room temperature by sputtering, as the gate dielectric in AlGaN/GaN high electron mobility transistors (HEMTs). Devices were fabricated with post-deposition annealing (PDA) at various temperatures (600 °C, 700 °C, 800 °C). Electrical characteristics including threshold voltage (Vth), transconductance (gm), breakdown voltage, and mobility were analyzed. The device annealed at 700 °C exhibited the highest gm,max (57.35 mS/mm), improved Vth (−1.79 V), and breakdown voltage (~1103 V). The results indicate annealing NiO deposition enhances device performance, positioning room-temperature NiO as a viable gate dielectric for high-performance GaN-based electronics.
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