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S7. III-N Optical and Electrical Properties
Poster Session
Tuesday,
Nov. 11, 2025 15:00-17:00
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Multifunction Room |
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Manuscript ID. 0034
Paper No. 2025-Tue-P0701-P001
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| Julien Brault
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Investigation of (Al,Ga)N:Mg p-type doping using UV light excitation during molecular beam epitaxy growth
Julien Brault, Sankesh Shetty, Satish Gupta, Sunanda Mitra, Sébastien Chenot, Mathieu Leroux, Mohamed Al Khalfioui, Université Côte d’Azur, CNRS, CRHEA, Valbonne, 06560, France; Samuel Matta, RIBER SA, 31 rue Casimir Perier, 95873 Bezons, France; Alexandra Ibanez, Leszek Konczewicz, Pierre Valvin, Guillaume Cassabois, Sylvie Contreras, Bernard Gil, UMR 5221, L2C and Université Montpellier 2, Montpellier, 34095, France; Takeshi Moriyasu, Hideaki Kitahara, Research Center for Development of Far Infrared Region, University of Fukui, 3-9-1 Bunkyo Fukui, 910-8507, Japan; Muhammad Ajmal Khan, Hideki Hirayama, Masahiko Tani, RIKEN Cluster for Pioneering Research (CPR), 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
Ultra wide band gap AlGaN materials are key elements in widely used LED and HEMT devices. However, p-type doping still remains a bottleneck to exploit their properties fully. In this work, a broad range of growth conditions has been explored for the fabrication of Mg-doped (Al,Ga)N layers by molecular beam epitaxy. In particular, through different epitaxial processes, benefitting from the use of two nitrogen sources (N2 or NH3) and the possibility to perform above band gap light excitation of the surface during growth, a large series of samples have been fabricated and compared using optical, structural and electrical characterizations.
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Manuscript ID. 0050
Paper No. 2025-Tue-P0701-P002
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| Min-Seok Lee
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Photon Recycling-Driven Vertical Light Extraction in InGaN Nanorods for Advanced Micro-LED Efficiency
Min-Seok Lee, Sung-Un Kim, Dae-Young Um, Jeong-Kyun Oh, Cheul-Ro Lee, Yong-Ho Ra, Division of Advanced Materials Engineering, College of Engineering, Jeonbuk National University (JBNU), Jeonju, Republic of Korea
The development of next-generation VR, MR, and XR displays relies on advances in GaN-based micro-LEDs with optimized nanorod architectures. 3D FDTD simulations demonstrate that changes in nanorod geometry significantly affect internal quantum efficiency and vertical light extraction efficiency, highlighting the importance of simulation in device optimization. Precision etching enables the fabrication of these advanced nanorod structures. Micro-PL and TRPL spectroscopy reveal that photon recycling (PR) greatly enhances spontaneous emission, achieving an 11-fold increase in luminous output compared to non-optimized counterparts. This combination of simulation-based design and PR elevates micro-LED performance for immersive and energy-efficient displays.
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Manuscript ID. 0069
Paper No. 2025-Tue-P0701-P003
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| Chien-Chung Lin
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Open-Circuit Voltage Methods to Detect Micro-LED Characteristics
Fu-An Tu, mannydu.ee11@nycu.edu.tw; Ming-Hsien Wu, ITRI_MHWu@itri.org.tw; Yen-Hsiang Fang, YHFang@itri.org.tw; Hao-Chung Kuo, hckuo0206@nycu.edu.tw; Chien-Chung Lin, chienchunglin@ntu.edu.tw
We propose a non-contact micro-LED inspection method using the photovoltaic effect. By measuring open-circuit voltage (Voc) under different light sources, devices can be classified as normal, open, short, leakage, or high-Vf. Results show short and open defects are easily identified, while high-Vf devices require analyzing Voc versus optical intensity. The method offers an efficient alternative for large-scale micro-LED screening.
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Manuscript ID. 0121
Paper No. 2025-Tue-P0701-P004
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| BEI MA
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Thickness-Dependent strain relaxation in Semipolar (11-22) AlN on m-Sapphire
Bei Ma, Yoshihiro Ishitani, Chiba University; Kensei Oya, Ryota Akaike, Hideto Miyake, Mie University
(11-22) AlN were grown by MOVPE on m-plane sapphire using face-to-face-annealed sputtered-AlN templates (0.2–2 μm). AFM imaging indicated a smooth surface; X-ray rocking curves assessed crystallinity. Room-temperature, unpolarized Raman resolved E₂(low), quasi-TO, E₂(high), E₁-TO, and quasi-LO modes; sapphire peaks were identified. Increasing thickness redshifted quasi-TO and E₂(high), evidencing strain relaxation.
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