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Unified studies on material gain and internal field screening in wide polar InGaN and AlGaN quantum wells are presented. Numerical results reveal a transition from quantum-confined to bulk-like behavior, governed by the well width and carrier-induced polarization screening. In wide wells, the optical gain is dominated by excited-state transitions, while in thin wells, it is primarily due to ground-state transitions. The analysis provides a comprehensive framework for understanding gain formation in III-nitride emitters and offers design strategies to mitigate the dead-width effect, enabling efficient light emission in both the visible and deep-UV spectral regions using wide quantum wells.

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