S1. III-N Bulk Crystal Growth
Dr. Michał BoćkowskiPoland
Director, Institute of High-Pressure Physics, Polish Academy of Sciences, Poland
S2. III-N Epitaxial Growth Techniques
Prof. Hideto Miyake 三宅 秀人Japan
Professor, Mie University, Japan
S3. III-N Ternary and Quaternary Alloys
Prof. Mitsuru Funato 船戶 充Japan
Professor, Kyoto University, Japan
S4. III-N Nanostructures and 2D Materials
Dr. Bernard GilFrance
Director of Research, CNRS, UNiversity of Montpellier, France
S5. III-N Heterostructure Characterization
Prof. Frank BertramGermany
Professor, Otto-von-Guericke-University Magdeburg, Germany
S6. III-N Defect Control and Surface Effects
Prof. Chris G. Van de Walle USA
Herbert Kroemer Distinguished Professor, Materials, University of California, Santa Barbara, USA
S7. III-N Optical and Electrical Properties
Prof. Yong-Hoon ChoSouth Korea
Professor, Korea Advanced Institute of Science and Technology (KAIST), South Korea
Prof. Martin KuballUK
Professor, University of Bristol, UK
Prof. Martin Kuball is unable to attend ISGN-8 in person. The talk will be delivered on his behalf by Dr. Sai Charan, a senior postdoctoral researcher from his team.
S8. III-N Device Modeling and Simulation
Prof. Yoshihiro Kangawa 寒川 義裕Japan
Professor, Kyushu University, Japan
S9. III-N Spin-related Phenomena
Prof. Jesús Zúñiga PérezFrance
CNRS Research Director
Visiting Professor at Nanyang Technological University, Singapore (PAP, SPMS)
S10. III-N Devices—FETs, LEDs, and Lasers
Prof. Tetsuya Takeuchi 竹內 哲也Japan
Professor, Meijo University, Japan
Special Session. Ultrawide-bandgap materials and devices
Prof. Masataka Higashiwaki 東脇 正高Japan
Professor, Osaka Metropolitan University, Japan
Dr. Ekaterine ChikoidzeFrance
Researcher, Project Leader, CNRS, Paris Saclay University, France