The 8th International Symposium on Growth of III-Nitrides (ISGN-8) is a biennial international conference hosted on a rotating basis by different countries worldwide. This symposium focuses on the latest advancements and future directions in the growth of bulk crystals, thin films, and nanostructures of III-nitrides.
ISGN began in 2006 in Linköping, Sweden. Since then, it has been held every two years: ISGN-2 in 2008 in Izu, Japan; ISGN-3 in 2010 in Montpellier, France; ISGN-4 in 2012 in St. Petersburg, Russia; ISGN-5 in 2014 in Atlanta, USA; ISGN-6 in 2016 in Hamamatsu, Japan; and ISGN-7 in 2018 in Warsaw, Poland. ISGN-8 was originally scheduled to take place in 2020 in San Diego, USA, but was canceled due to the global COVID-19 pandemic.
Fortunately, ISGN will resume in 2025 and will be held from November 9 to November 12, 2025, at National Cheng Kung University (NCKU), Tainan, Taiwan.
This year ISGN-8 comprises 10 parallel sessions and 1 special session:
- III-N Bulk Crystal Growth
- III-N Epitaxial Growth Techniques
- III-N Ternary and Quaternary Alloys
- III-N Nanostructures and 2D Materials
- III-N Heterostructure Characterization
- III-N Defect Control and Surface Effects
- III-N Optical and Electrical Properties
- III-N Device Modeling and Simulation
- III-N Spin-related Phenomena
- III-N Devices—FETs, LEDs, and Lasers
Special SessionUltrawide-bandgap materials and devices
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